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CN647TR

更新时间: 2024-11-07 19:09:23
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 70K
描述
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-41, DO-41SP, 2 PIN

CN647TR 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:O-XALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.84
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-XALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.4 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.6 W认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

CN647TR 数据手册

 浏览型号CN647TR的Datasheet PDF文件第2页 
DATA SHEET  
CN645 THRU CN649  
GLASS PASSIVATED JUNCTION  
GENERAL PURPOSE DIODE  
DO-41SP CASE  
DESCRIPTION  
The CENTRAL SEMICONDUCTOR CN645 Series types are Glass Passivated Junction general-purpose diodes, which are  
well constructed, highly reliable components designed for use in all types of commercial, industrial, entertainment, computer  
and automotive applications.  
MAXIMUM RATINGS (T =25°C unless otherwise noted)  
A
SYMBOL  
CN645 CN646 CN647 CN648 CN649  
UNITS  
V
mA  
mA  
A
Peak Working Reverse Voltage  
Average Forward Current  
V
225  
300  
400  
400  
150  
3.0  
500  
600  
RWM  
I
I
I
O
O
FSM  
Average Forward Current (T =150°C)  
A
Peak Forward Surge Current  
Power Dissipation  
P
600  
mW  
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to 150  
°C  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
CN645  
CN646  
CN647  
CN648  
CN649  
SYMBOL  
TEST CONDITIONS  
I =100µA, T =100°C  
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX  
UNITS  
V
275  
360  
480  
600  
720  
V
µA  
µA  
V
BR  
R
R
A
I
I
V =RATED V  
T =100°C  
15  
15  
20  
0.2  
1.0  
20  
0.2  
1.0  
25  
R
RWM, A  
V =RATED V  
0.2  
1.0  
11 TYP  
0.2  
1.0  
11 TYP  
0.2  
1.0  
11 TYP  
R
R
RWM  
V
IF=400mA  
F
C
V =12V, f=1.0MHz  
11 TYP  
11 TYP  
pF  
T
R
(SEE REVERSE SIDE)  
R1  

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