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CN25G PDF预览

CN25G

更新时间: 2024-11-13 22:28:43
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 21K
描述
CELL RECTIFIER DIODES

CN25G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:O-CEDB-N2
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:25 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
最大重复峰值反向电压:400 V最大反向电流:5 µA
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

CN25G 数据手册

 浏览型号CN25G的Datasheet PDF文件第2页 
CELL RECTIFIER DIODES  
CN25A - CN25M  
PRV : 50 - 1000 Volts  
Io : 25 Amperes  
C25A  
6.20  
5.47  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
0.51  
ANODE  
* Low reverse current  
* Low forward voltage drop  
* Chip form  
1.45  
CATHODE  
0.38  
Dimensions in millimeter  
MECHANICAL DATA :  
* Case : C25A  
* Terminals : Solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Cathode to bigger size slug, For  
Anode to bigger size slug use "R" suffix.  
* Mounting position : Any  
* Weight : 0.31 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL CN25A CN25B CN25D CN25G CN25J CN25K CN25M UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
25  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Amps  
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Current Tc = 75°C  
Peak Forward Surge Current Single half sine wave  
superimposed on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 25 Amps.  
IF(AV)  
IFSM  
VF  
400  
Amps  
Volts  
mA  
1.1  
5.0  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
IR  
Ta = 100 °C  
IR(H)  
CJ  
1.0  
mA  
pF  
Typical Junction Capacitance (Note 1)  
Thermal Resistance, Junction to Case  
Junction Temperature Range  
300  
10  
°C/W  
°C  
RqJC  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC  
UPDATE : APRIL 23, 1998  

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