Datasheet > CMT2N7000

CMT2N7000

更新时间： 2024-10-01 21:54:59

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描述
Small Signal MOSFET

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中文翻译

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数据手册

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CMT2N7000 数据手册

CMT2N7000

SMALL SIGNAL MOSFET

GENERAL DESCRIPTION

FEATURES

This N-Channel enhancement mode field effect transistor is ꢀ

produced using high cell density, DMOS technology. These ꢀ

High Density Cell Design for Low R_DS(ON)

Voltage Controlled Small Signal Switch

Rugged and Reliable

products have been designed to minimize on-state

ꢀ

resistance while provide rugged, reliable, and fast switching ꢀ

performance. It can be used in most applications requiring

up to 200mA DC and can deliver pulsed currents up to

500mA. This product is particularly suited for low voltage,

low current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

High Saturation Current Capability

PIN CONFIGURATION

SYMBOL

TO-92

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

CMT2N7000

TO-92

ABSOLUTE MAXIMUM RATINGS

Rating

Drain Source Voltage

Drain-Gate Voltage (R_GS= 1.0MΩ)

Drain to Current － Continuous

－ Pulsed

Symbol

V_DSS

V_DGR

I_D

Value

Unit

200

I_DM

500

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

V_GS

V_GSM

P_D

±20

±40

350

2.8

mW/℃

℃

Derate above 25℃

Operating and Storage Temperature Range

Thermal Resistance － Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_J, T_STG

θ_JA

-55 to 150

357

℃/W

℃

T_L

300

2002/10/07 Preliminary ^{Rev. 1.0}

Champion Microelectronic Corporation

Page 1

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