Datasheet > CMT10N10

CMT10N10

更新时间： 2024-09-28 09:27:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	154K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT10N10 数据手册

CMT10N10

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This advanced MOSFET is designed to withstand high

ꢀ

Avalanche Energy Specified

energy in avalanche and commutation modes. The new ꢀ

energy efficient design also offers a drain-to-source diode

with a fast recovery time. Designed for high voltage, high ꢀ

speed switching applications in power supplies, converters ꢀ

and PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(on) Specified at Elevated Temperature

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

PIN CONFIGURATION

SYMBOL

TO-220

Front View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

CMT10N10N220

TO-220

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

Symbol

I_D

Value

Unit

－ Pulsed

I_DM

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

V_GS

V_GSM

P_D

±20

±40

Derate above 25℃

0.32

-55 to 150

W/℃

℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 10A, L = 1.38mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

θ_JC

θ_JA

T_L

3.13

100

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2001/12/24 Preliminary ^{Rev. 1}

Champion Microelectronic Corporation

Page 1

12 3 4 5

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