CMT10N10
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced MOSFET is designed to withstand high
ꢀ
Avalanche Energy Specified
energy in avalanche and commutation modes. The new ꢀ
energy efficient design also offers a drain-to-source diode
with a fast recovery time. Designed for high voltage, high ꢀ
speed switching applications in power supplies, converters ꢀ
and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220
Front View
D
G
S
2
3
1
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT10N10N220
TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
Symbol
ID
Value
10
Unit
A
- Pulsed
IDM
35
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
VGS
VGSM
PD
±20
±40
40
V
V
W
Derate above 25℃
0.32
-55 to 150
69
W/℃
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
TJ, TSTG
EAS
mJ
θJC
θJA
TL
3.13
100
260
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
℃
2001/12/24 Preliminary Rev. 1
Champion Microelectronic Corporation
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