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CMS16(T2L,TEM,Q) PDF预览

CMS16(T2L,TEM,Q)

更新时间： 2024-11-21 20:56:47
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 256K
描述
Rectifier Diode

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中文翻译

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CMS16(T2L,TEM,Q) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.7应用：GENERAL PURPOSE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.55 V
JESD-30 代码：R-PDSO-F2最大非重复峰值正向电流：30 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-40 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE最大重复峰值反向电压：40 V
最大反向电流：200 µA反向测试电压：40 V
表面贴装：YES技术：SCHOTTKY
端子形式：FLAT端子位置：DUAL
Base Number Matches：1

CMS16(T2L,TEM,Q) 数据手册

 浏览型号CMS16(T2L,TEM,Q)的Datasheet PDF文件第2页浏览型号CMS16(T2L,TEM,Q)的Datasheet PDF文件第3页浏览型号CMS16(T2L,TEM,Q)的Datasheet PDF文件第4页浏览型号CMS16(T2L,TEM,Q)的Datasheet PDF文件第5页 
CMS16  
TOSHIBA Schottky Barrier Diode  
CMS16  
Switching Mode Power Supply Applications  
Portable Equipment Battery Applications  
DC-DC Converter Applications  
Unit: mm  
•
•
•
•
Repetitive peak reverse voltage : V  
= 40 V  
= 3 A  
RRM  
Average forward current  
Peak forward voltage  
: I  
: V  
F (AV)  
= 0.55 V (max) (@I = 3 A)  
FM  
FM  
Suitable for compact assembly due to a small surface-mount package:  
TM  
“M−FLAT ” (Toshiba package name)”  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Repetitive peak reverse voltage  
Average forward current  
Symbol  
Rating  
40  
Unit  
V
V
RRM  
I
3 (Note 1)  
30 (50 Hz)  
−40 to 150  
−40 to 150  
A
F (AV)  
Non-repetitive peak forward surge current  
Junction temperature  
I
A
FSM  
T
°C  
°C  
j
Storage temperature range  
T
stg  
Note 1: Tℓ = 106°C Device mounted on a ceramic board  
Board size : 50 mm × 50 mm  
Soldering land size : 2 mm × 2 mm  
Board thickness : 0.64 mm  
Rectangular waveform (α = 180°), V = 20 V  
JEDEC  
JEITA  
R
TOSHIBA  
3-4E1A  
Note 2 : Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
Weight: 0.023 g (typ.)  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1 A (pulse test)  
Min  
Typ.  
0.4  
0.50  
2
Max  
Unit  
V
V
I
I
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
V
= 3 A (pulse test)  
0.55  
I
V
V
V
= 5 V (pulse test)  
= 40 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
pF  
I
26  
200  
C
j
= 10 V, f = 1 MHz  
R
95  
Device mounted on a ceramic board  
board size : 50 mm × 50 mm  
soldering land size : 2 mm × 2 mm  
board thickness : 0.64 mm  
60  
Device mounted on a glass-epoxy board  
Thermal resistance  
(junction to ambient)  
board size  
: 50 mm × 50 mm  
R
th (j-a)  
135  
°C/W  
soldering land size : 6 mm × 6 mm  
board thickness : 1.6 mm  
Device mounted on a glass-epoxy board  
board size  
soldering land size : 2.1 mm × 1.4 mm  
board thickness : 1.6 mm  
: 50 mm × 50 mm  
210  
16  
Thermal resistance (junction to lead)  
R
th (j-ℓ)  
°C/W  
Start of commercial production  
2003-12  
1
2018-04-04  
12345

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