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CMR3S-01TR13 PDF预览

CMR3S-01TR13

更新时间: 2024-11-08 14:50:59
品牌 Logo 应用领域
CENTRAL 超快速恢复二极管光电二极管
页数 文件大小 规格书
2页 333K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, SMC, 2 PIN

CMR3S-01TR13 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMC, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:HIGH RELIABILITY
应用:SUPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:100 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMR3S-01TR13 数据手册

 浏览型号CMR3S-01TR13的Datasheet PDF文件第2页 
CMR3S-01 CMR3S-04  
CMR3S-02 CMR3S-06  
www.centralsemi.com  
SURFACE MOUNT SILICON  
SUPER FAST  
RECOVERY RECTIFIERS  
3.0 AMP, 100 THRU 600 VOLT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR3S-01 series  
3.0 Amp surface mount silicon Super Fast Recovery  
rectifiers are highly reliable components designed for  
use in all types of commercial, industrial, entertainment,  
computer, and automotive applications. To order devices  
on 16mm Tape and Reel (3000/13” Reel), add TR13  
suffix to part number.  
MARKING CODE: SEE MARKING CODE TABLE ON  
FOLLOWING PAGE  
SMC CASE  
FEATURES:  
Super fast recovery (35ns MAX)  
High reliability  
Glass passivated chip  
Special selections available  
“C” bend construction provides strain  
relief when mounted on PC board  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CMR3S-01 CMR3S-02 CMR3S-04 CMR3S-06 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
100  
100  
70  
200  
200  
140  
400  
400  
280  
600  
600  
420  
V
RRM  
V
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =75°C)  
L
I
3.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
I
100  
A
FSM  
Operating and Storage Junction Temperature T , T  
-65 to +150  
16  
°C  
°C/W  
J
stg  
Thermal Resistance  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
V =Rated V  
1.0  
μA  
R
R
RRM  
I
V =Rated V  
, T =100°C  
200  
0.95  
1.25  
1.70  
35  
μA  
V
R
R
RRM  
A
V
V
V
I =3.0A (CMR3S-01, CMR3S-02)  
F
F
F
F
I =3.0A (CMR3S-04)  
V
F
I =3.0A (CMR3S-06)  
V
F
t
I =0.5A , I =1.0A, I =0.25A  
ns  
pF  
rr  
F
R
rr  
C
V =4.0V, f=1.0MHz  
45  
J
R
R3 (11-September 2013)  

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