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CMR2-04BKLEADFREE PDF预览

CMR2-04BKLEADFREE

更新时间: 2024-11-23 13:07:03
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 290K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon,

CMR2-04BKLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:2.5 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

CMR2-04BKLEADFREE 数据手册

 浏览型号CMR2-04BKLEADFREE的Datasheet PDF文件第2页 
CMR2-02 CMR2-06  
CMR2-04 CMR2-10  
www.centralsemi.com  
SURFACE MOUNT  
GENERAL PURPOSE  
SILICON RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR2-02 Series  
2.0 Amp Surface Mount Silicon Rectifier is a high  
quality, well constructed, highly reliable component  
designed for use in all types of commercial, industrial,  
entertainment, computer, and automotive applications.  
To order devices on 12mm Tape and Reel (3000/13”  
Reel), add TR13 suffix to part number.  
2 AMP, 200 THRU 1000 VOLTS  
MARKING CODE: SEE MARKING CODE TABLE ON  
FOLLOWING PAGE  
SMB CASE  
FEATURES:  
• Glass passivated chip  
• Low cost  
• “C” bend construction provides strain relief  
when mounted on pc board  
• Special selections available  
• High reliability  
• Superior lot to lot consistency  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CMR2-02 CMR2-04  
CMR2-06 CMR2-10 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
1000  
1000  
700  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =50°C)  
A
Peak Forward Surge Current, tp=8.3ms  
I
2.0  
60  
A
O
I
A
FSM  
Operating and Storage Junction Temperature T , T  
-65 to +150  
20  
°C  
°C/W  
J
stg  
Thermal Resistance  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
UNITS  
µA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
125  
1.1  
µA  
R
R
A
V
I =2.0A  
V
F
F
t
I =0.5A, I =1.0A, I =0.25A  
2.5  
µs  
rr  
F
R
rr  
C
V =4.0V, f=1.0MHz  
30  
pF  
J
R
R3 (3-February 2010)  

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