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CMR2-06BKPBFREE PDF预览

CMR2-06BKPBFREE

更新时间: 2024-11-24 05:56:47
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 290K
描述
Rectifier Diode, 1 Element, 2A, 600V V(RRM),

CMR2-06BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:60 A
元件数量:1最高工作温度:150 °C
最大输出电流:2 A最大重复峰值反向电压:600 V
最大反向恢复时间:2.5 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

CMR2-06BKPBFREE 数据手册

 浏览型号CMR2-06BKPBFREE的Datasheet PDF文件第2页 
CMR2-02 CMR2-06  
CMR2-04 CMR2-10  
www.centralsemi.com  
SURFACE MOUNT  
GENERAL PURPOSE  
SILICON RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR2-02 Series  
2.0 Amp Surface Mount Silicon Rectifier is a high  
quality, well constructed, highly reliable component  
designed for use in all types of commercial, industrial,  
entertainment, computer, and automotive applications.  
To order devices on 12mm Tape and Reel (3000/13”  
Reel), add TR13 suffix to part number.  
2 AMP, 200 THRU 1000 VOLTS  
MARKING CODE: SEE MARKING CODE TABLE ON  
FOLLOWING PAGE  
SMB CASE  
FEATURES:  
• Glass passivated chip  
• Low cost  
• “C” bend construction provides strain relief  
when mounted on pc board  
• Special selections available  
• High reliability  
• Superior lot to lot consistency  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CMR2-02 CMR2-04  
CMR2-06 CMR2-10 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
1000  
1000  
700  
V
V
RRM  
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =50°C)  
A
Peak Forward Surge Current, tp=8.3ms  
I
2.0  
60  
A
O
I
A
FSM  
Operating and Storage Junction Temperature T , T  
-65 to +150  
20  
°C  
°C/W  
J
stg  
Thermal Resistance  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
UNITS  
µA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
125  
1.1  
µA  
R
R
A
V
I =2.0A  
V
F
F
t
I =0.5A, I =1.0A, I =0.25A  
2.5  
µs  
rr  
F
R
rr  
C
V =4.0V, f=1.0MHz  
30  
pF  
J
R
R3 (3-February 2010)  

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