Datasheet > CMPD2005SGTIN/LEAD

CMPD2005SGTIN/LEAD

更新时间： 2024-01-25 22:11:56

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	462K
描述
Rectifier Diode,

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技术参数
数据手册

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CMPD2005SGTIN/LEAD 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.66	Base Number Matches：	1

CMPD2005SGTIN/LEAD 数据手册

CMPD2005S

CMPD2005SG*

www.centralsemi.com

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2005S

and CMPD2005SG each contain two (2) High Voltage

Silicon Switching Diodes, manufactured by the epitaxial

planar process, epoxy molded in a SOT-23 surface

mount package, designed for applications requiring

high voltage capability.

SILICON SWITCHING DIODES

MARKING CODES:

CMPD2005S:

DB5

CMPD2005SG*: 5SG

SOT-23 CASE

Device is Halogen Free by design

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Forward Current

300

350

RRM

200

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

225

625

FRM

4.0

FSM

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =280V

MIN

MAX

100

UNITS

μA

V =280V, T =150°C

100

I =100μA

350

I =20mA

0.87

1.0

I =100mA

I =200mA

1.25

5.0

V =0, f=1.0MHz

I =I =30mA, Rec. to 3.0mA, R =100Ω

R3 (25-January 2010)

12 3

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