Datasheet > CMPD2005SGTRPBFREE

CMPD2005SGTRPBFREE

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
2页	392K
描述
Rectifier Diode, 0.2A, 350V V(RRM),

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技术参数
数据手册

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CMPD2005SGTRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.87 V
最大非重复峰值正向电流：	4 A	最高工作温度：	150 °C
最大输出电流：	0.2 A	最大重复峰值反向电压：	350 V
最大反向恢复时间：	0.05 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

CMPD2005SGTRPBFREE 数据手册

CMPD2005S

CMPD2005SG*

www.centralsemi.com

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2005S

and CMPD2005SG each contain two (2) High Voltage

Silicon Switching Diodes, manufactured by the epitaxial

planar process, epoxy molded in a SOT-23 surface

mount package, designed for applications requiring

high voltage capability.

SILICON SWITCHING DIODES

MARKING CODES:

CMPD2005S:

DB5

CMPD2005SG*: 5SG

SOT-23 CASE

Device is Halogen Free by design

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Forward Current

300

350

RRM

200

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

225

625

FRM

4.0

FSM

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =280V

MIN

MAX

100

UNITS

μA

V =280V, T =150°C

100

I =100μA

350

I =20mA

0.87

1.0

I =100mA

I =200mA

1.25

5.0

V =0, f=1.0MHz

I =I =30mA, Rec. to 3.0mA, R =100Ω

R3 (25-January 2010)

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