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CMPD2836#N/A PDF预览

CMPD2836#N/A

更新时间: 2024-02-01 08:31:44
品牌 Logo 应用领域
CENTRAL 整流二极管开关光电二极管
页数 文件大小 规格书
2页 455K
描述
Rectifier Diode,

CMPD2836#N/A 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.64
Is Samacsys:N配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

CMPD2836#N/A 数据手册

 浏览型号CMPD2836#N/A的Datasheet PDF文件第2页 
CMPD2836  
CMPD2838  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, SILICON  
SWITCHING DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPD2836 and  
CMPD2838 types are ultra-high speed switching diodes  
manufactured by the epitaxial planar process, in an  
epoxy molded surface mount package, designed for  
high speed switching applications.  
SOT-23 CASE  
The following configurations are available:  
CMPD2836 DUAL, COMMON ANODE  
MARKING CODE: CA2  
CMPD2838 DUAL, COMMON CATHODE MARKING CODE: CA6  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Average Forward Current  
Peak Forward Current  
V
75  
200  
RRM  
I
mA  
O
I
300  
mA  
FM  
Power Dissipation  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
V
I
V =50V  
100  
R
R
BV  
I =100μA  
75  
R
R
V
V
V
I =10mA  
1.0  
1.0  
1.2  
4.0  
4.0  
V
F
F
F
F
I =50mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
1.5  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
R F L  
rr  
R6 (25-January 2010)  

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