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CMLT2907ABKLEADFREE

更新时间： 2024-02-21 23:13:19

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
2页	98K
描述
Transistor

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中文翻译

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技术参数
数据手册

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CMLT2907ABKLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.6 A
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	200 MHz

CMLT2907ABKLEADFREE 数据手册

Central

CMLT2907A

Semiconductor Corp.

SURFACE MOUNT

PICOmini

DUAL PNP SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT2907A

consists of two individual, isolated 2907A PNP

silicon transistors, manufactured by the epitaxial

planar process and epoxy molded in an SOT-563

surface mount package. This PICOmini™

devices has been designed for small signal

general purpose and switching applications.

MARKING CODE: L07

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

5.0

600

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

=50V, T =125°C

=30V, V =0.5V

µA

CBO

CEV

CBO

CEO

I =10µA

5.0

I =10mA

I =10µA

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

=10V, I =500mA

300

R1 (13-November 2002)

中文翻译

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