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CMLT2207G PDF预览

CMLT2207G

更新时间： 2024-02-01 23:21:13
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 578K
描述
SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS

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CMLT2207G 数据手册

 浏览型号CMLT2207G的Datasheet PDF文件第2页 
CMLT2207G  
www.centralsemi.com  
SURFACE MOUNT  
DUAL, COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT2207G  
consists of one isolated 2N2222A NPN transistor and  
one complementary isolated 2N2907A PNP transistor,  
manufactured by the epitaxial planar process and  
epoxy molded in an SOT-563 surface mount package.  
This PICOmini™ device has been designed for  
small signal general purpose amplifier and switching  
applications.  
MARKING CODE: L7G  
SOT-563 CASE  
Device is Halogen Free by design  
•
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
NPN (Q1)  
PNP (Q2)  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
75  
40  
60  
60  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
Θ
-65 to +150  
357  
J
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN (Q1)  
PNP (Q2)  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
MIN MAX  
UNITS  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V  
=50V  
=60V, T =125°C  
-
-
10  
-
-
-
-
-
10  
-
CBO  
CBO  
CBO  
CBO  
CEV  
CEV  
EBO  
CBO  
CEO  
EBO  
CB  
CB  
CB  
CB  
CE  
CE  
EB  
-
-
10  
-
A
A
=50V, T =125°C  
-
-
10  
-
=60V, V  
=30V, V  
=3.0V  
=3.0V  
=500mV  
-
-
10  
-
EB(OFF)  
EB(OFF)  
-
-
50  
-
-
10  
-
-
BV  
BV  
BV  
I =10μA  
75  
40  
6.0  
-
60  
60  
5.0  
-
-
-
-
-
-
C
I =10mA  
C
I =10μA  
-
E
V
V
V
V
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
-
0.4  
1.6  
1.3  
2.6  
-
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
B
B
B
C
C
C
C
I =500mA, I =50mA  
-
C
I =150mA, I =15mA  
0.6  
-
35  
50  
75  
V
V
C
I =500mA, I =50mA  
-
C
h
h
h
h
h
V
=10V, I =0.1mA  
=10V, I =1.0mA  
=10V, I =10mA  
=10V, I =150mA  
=1.0V, I =150mA  
=10V, I =500mA  
75  
100  
100  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
-
-
-
-
FE  
FE  
FE  
FE  
100 300  
100 300  
50  
40  
-
-
-
50  
-
-
C
h
V
FE  
CE  
C
R3 (20-January 2010)  
12

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