Datasheet > CMLT2907A_10

CMLT2907A_10

更新时间： 2024-01-11 14:59:17

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	575K
描述
SURFACE MOUNT DUAL PNP SILICON TRANSISTORS

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CMLT2907A_10 数据手册

CMLT2907A

www.centralsemi.com

SURFACE MOUNT

DUAL PNP

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT2907A

consists of two individual, isolated 2907A PNP

silicon transistors, manufactured by the epitaxial

planar process and epoxy molded in an SOT-563

surface mount package. This PICOmini™ devices has

been designed for small signal general purpose and

switching applications.

MARKING CODE: L07

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=50V

CBO

CEV

=50V, T =125°C

=30V, V =0.5V

I =10µA

CBO

CEO

I =10mA

I =10µA

5.0

EBO

I =150mA, I =15mA

0.4

1.6

1.3

2.6

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=10V, I =500mA

R2 (20-January 2010)

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