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CMKT5088LEADFREE PDF预览

CMKT5088LEADFREE

更新时间: 2024-09-25 13:06:55
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管
页数 文件大小 规格书
2页 194K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, ULTRAMINI PACKAGE-6

CMKT5088LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:30 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN (315)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

CMKT5088LEADFREE 数据手册

 浏览型号CMKT5088LEADFREE的Datasheet PDF文件第2页 
TM  
CMKT5078  
CMKT5087  
CMKT5088  
Central  
Semiconductor Corp.  
ULTRAmini  
DESCRIPTION:  
SURFACE MOUNT  
SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR CMKT5078 ,  
CMKT5087, and CMKT5088, are Silicon  
transistors in an ULTRAmini surface mount  
package, designed for applications requiring high  
gain and low noise.  
The following configurations are available:  
CMKT5078 Dual, Complementary Marking Code: K78  
SOT-363 CASE  
CMKT5087 Dual, PNP  
CMKT5088 Dual, NPN  
Marking Code: K87  
Marking Code: K88  
o
MAXIMUM RATINGS: (T =25 C)  
A
SYMBOL  
NPN  
35  
PNP  
50  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
CBO  
CEO  
EBO  
30  
50  
V
4.5  
3.0  
V
I
50  
mA  
mW  
C
Power Dissipation  
P
350  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
stg  
-65 to +150  
357  
C
J
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)  
A
NPN  
PNP  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=10V  
=35V  
=20V  
=3.0V  
10  
50  
nA  
nA  
nA  
nA  
V
CBO  
CBO  
CBO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
BE(SAT)  
FE  
FE  
FE  
T
ob  
ib  
fe  
CB  
CB  
CB  
EB  
50  
50  
BV  
BV  
BV  
V
V
h
h
h
f
C
C
h
NF  
I =100µA  
35  
30  
4.5  
50  
50  
3.0  
C
I =1.0mA  
V
C
I =100µA  
V
E
I =10mA, I =1.0mA  
0.50  
0.80  
900  
0.30  
0.85  
800  
V
C
B
I =10mA, I =1.0mA  
V
C
B
V
=5.0V, I =0.1mA  
300  
350  
300  
50  
250  
250  
250  
40  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
=5.0V, I =10mA  
C
=5.0V, I =500µA, f=20MHz  
MHz  
pF  
pF  
C
=5.0V, I =0, f=1.0MHz  
4.0  
15  
1400  
4.0  
900  
2.0  
2.0  
E
=0.5V, I =0, f=1.0MHz  
C
=5.0V, I =1.0mA, f=1.0kHz  
350  
250  
C
=5.0V, I =100µA, R =10kΩ  
C S  
f=10Hz to 15.7kHz  
=5.0V, I =100µA, RS=10kΩ  
3.0  
dB  
dB  
NF  
V
CE  
f=1.0kHz  
C
R0 ( 19-September 2001)  

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