Datasheet > CMKD6263DO_10

CMKD6263DO_10

更新时间： 2024-01-04 11:02:01

品牌	Logo	应用领域
CENTRAL		肖特基二极管高压
页数	文件大小	规格书
2页	490K
描述
SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES

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CMKD6263DO_10 数据手册

CMKD6263DO

SURFACE MOUNT

DUAL OPPOSING

HIGH VOLTAGE SILICON

SCHOTTKY DIODES

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKD6263DO

contains two (2) galvanically isolated, high voltage, low

V Silicon Schottky diodes with an opposing Anode/

Cathode configuration, epoxy molded in a SOT-363

surface mount package. This ULTRAmini™ device has

been designed for fast switching applications requiring a

low forward voltage drop.

MARKING CODE: 63D

SOT-363 CASE

FEATURES:

• Dual Opposing (DO) Schottky Diodes

• High Voltage (70V)

• Low Forward Voltage

• Galvanically Isolated

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Forward Surge Current, tp=1.0s

Power Dissipation

RRM

FSM

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

UNITS

V =50V

200

I =10μA

I =1.0mA

395

410

2.0

5.0

V =0, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

R3 (13-January 2010)

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