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CMKDM3575BKPBFREE PDF预览

CMKDM3575BKPBFREE

更新时间: 2024-01-03 06:25:28
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 711K
描述
Transistor,

CMKDM3575BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61FET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL AND P-CHANNEL子类别:Other Transistors
表面贴装:YESBase Number Matches:1

CMKDM3575BKPBFREE 数据手册

 浏览型号CMKDM3575BKPBFREE的Datasheet PDF文件第2页 
TM  
CMKDM3590 N-CH/N-CH  
CMKDM7590 P-CH/P-CH  
CMKDM3575 N-CH/P-CH  
Central  
Semiconductor Corp.  
DESCRIPTION:  
SURFACE MOUNT  
These CENTRAL SEMICONDUCTOR devices are  
combinations of dual N-Channel and P-Channel  
Enhancement-mode silicon MOSFETs designed for high  
speed pulsed amplifier and driver applications. These  
devices offer desirable MOSFET electrical characteristics  
in an economical, industry standard SOT-363 package.  
N-CHANNEL AND P-CHANNEL  
DUAL ENHANCEMENT-MODE  
COMPLEMENTARY MOSFETS  
MARKING CODES: CMKDM3590: 3C5  
CMKDM7590: 7C5  
CMKDM3575: 37C  
SOT-363 CASE  
• Devices are Halogen Free by design  
FEATURES:  
• ESD Protection up to 2kV  
• Power Dissipation: 350mW  
• Low Threshold Voltage  
• Logic Level Compatibility  
• Small SOT-363 Surface Mount Package  
APPLICATIONS:  
• Load/Power Switches  
• Power Supply Converter Circuits  
• Battery Powered Portable Devices  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
SYMBOL CMKDM3590  
CMKDM7590  
UNITS  
V
V
mA  
mA  
mW  
°C  
A
V
V
I
I
20  
8.0  
DS  
GS  
D
D
160  
200  
140  
180  
Continuous Drain Current (t < 5s)  
p
Power Dissipation  
P
350  
-65 to +150  
357  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
CMKDM3590  
CMKDM7590  
MIN TYP MAX  
A
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX  
UNITS  
nA  
nA  
nA  
V
V
Ω
Ω
Ω
Ω
Ω
S
pF  
pF  
pF  
ns  
ns  
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0V  
-
-
-
20  
-
-
-
-
100  
50  
100  
-
-
-
-
20  
-
-
-
-
100  
50  
100  
-
GSSF GSSR  
DSS  
DSS  
GS  
DS  
DS  
GS  
DS  
=5.0V, V =0V  
GS  
=16V, V =0V  
GS  
BV  
V
=0V, I =250μA  
DSS  
GS(th)  
D
=V , I =250μA  
0.4  
-
1.0  
3.0  
4.0  
6.0  
10  
-
-
-
-
-
0.4  
-
1.0  
5.0  
7.0  
10  
17  
-
-
-
-
-
DS GS  
D
D
D
D
D
D
D
r
r
r
r
r
=4.5V, I =100mA  
-
-
-
-
-
-
-
-
-
-
-
1.5  
2.0  
3.0  
4.0  
7.0  
1.3  
2.2  
9.0  
3.0  
40  
150  
-
-
-
-
-
-
-
-
-
-
-
4.0  
5.5  
8.0  
11  
20  
1.3  
1.0  
12  
2.7  
60  
210  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DD  
DD  
=2.5V, I =50mA  
=1.8V, I =20mA  
=1.5V, I =10mA  
=1.2V, I =1.0mA  
g
=5.0V, I =125mA  
FS  
rss  
iss  
C
C
C
=15V, V =0V, f=1.0MHz  
GS  
=15V, V =0V, f=1.0MHz  
GS  
=15V, V =0V, f=1.0MHz  
oss  
GS  
GS  
t
t
=10V, V =4.5V, I =200mA  
=10V, V =4.5V, I =200mA  
GS  
-
-
-
-
on  
off  
D
D
R0 (26-May 2009)  

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