Datasheet > CMKD6263TRPBFREE

CMKD6263TRPBFREE

更新时间： 2023-01-02 15:28:50

品牌	Logo	应用领域
CENTRAL		测试
页数	文件大小	规格书
2页	493K
描述
Diode,

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中文翻译

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技术参数
数据手册

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CMKD6263TRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.59
最大正向电压 (VF)：	0.41 V	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大功率耗散：	0.25 W
最大重复峰值反向电压：	70 V	最大反向电流：	0.2 µA
最大反向恢复时间：	0.005 µs	反向测试电压：	50 V
子类别：	Other Diodes	表面贴装：	YES
Base Number Matches：	1

CMKD6263TRPBFREE 数据手册

CMKD6263

SURFACE MOUNT

TRIPLE ISOLATED

HIGH VOLTAGE SILICON

SCHOTTKY DIODES

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMKD6263

contains three (3) galvanically isolated, high voltage

Silicon Schottky diodes, epoxy molded in a SOT-363

surface mount package. This ULTRAmini™ device has

been designed for fast switching applications requiring a

low forward voltage drop.

MARKING CODE: K63

SOT-363 CASE

FEATURES:

• Meets Galvanic Isolation

Requirements of IEEE 1394

• High Voltage (70V)

• ULTRAmini^™Package

• Requires less board space than 3 individual diodes

• Low Forward Voltage

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Forward Surge Current, tp=1.0s

Power Dissipation

RRM

FSM

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

UNITS

V =50V

200

I =10μA

I =1.0mA

395

410

2.0

5.0

V =0, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

R4 (13-January 2010)

中文翻译

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