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CMKD6263TR PDF预览

CMKD6263TR

更新时间: 2024-02-10 17:16:18
品牌 Logo 应用领域
CENTRAL 测试光电二极管
页数 文件大小 规格书
2页 493K
描述
Rectifier Diode, Schottky, 3 Element, 0.015A, 70V V(RRM), Silicon, PLASTIC, ULTRAMINI-6

CMKD6263TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, ULTRAMINI-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.29
配置:SEPARATE, 3 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:3
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.015 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向电流:0.2 µA最大反向恢复时间:0.005 µs
反向测试电压:50 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

CMKD6263TR 数据手册

 浏览型号CMKD6263TR的Datasheet PDF文件第2页 
CMKD6263  
SURFACE MOUNT  
TRIPLE ISOLATED  
HIGH VOLTAGE SILICON  
SCHOTTKY DIODES  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMKD6263  
contains three (3) galvanically isolated, high voltage  
Silicon Schottky diodes, epoxy molded in a SOT-363  
surface mount package. This ULTRAmini™ device has  
been designed for fast switching applications requiring a  
low forward voltage drop.  
MARKING CODE: K63  
SOT-363 CASE  
FEATURES:  
• Meets Galvanic Isolation  
Requirements of IEEE 1394  
• High Voltage (70V)  
• ULTRAminiPackage  
• Requires less board space than 3 individual diodes  
• Low Forward Voltage  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
V
70  
15  
RRM  
I
mA  
F
I
50  
mA  
FSM  
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
I
V =50V  
98  
200  
R
R
BV  
I =10μA  
70  
V
R
R
V
I =1.0mA  
395  
410  
2.0  
5.0  
mV  
pF  
F
F
C
V =0, f=1.0MHz  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
ns  
rr  
R
F
L
R4 (13-January 2010)  

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