Datasheet > CM80N10GF5

CM80N10GF5

更新时间： 2024-11-07 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1429K
描述
DFN5x6

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CM80N10GF5 数据手册

CM80N10GF5

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CM80N10GF5 is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Battery management

Power management

Load switch

Marking Information

Features



VDS: 100V

ID: 97A

Marking Code = 80N10GF5

Date Code = XXXX

RDS_ON(@VGS=10V) : < 6mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

80N10GF5

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

Top View

Bottom View

Part Number

Packaging

5000/Tape & Reel

Reel Size

CM80N10GF5

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

100

VGS

±20

TC=25°C

TC=100°C

TA=25°C

TA=100°C

Drain Current⁽¹⁾⁽⁶⁾

Pulsed Drain Current⁽³⁾

IDM

389

TC=25°C

TA=25°C

114

Total Power Dissipation⁽⁴⁾

Thermal Resistance Junction-to-Ambient⁽²⁾⁽⁵⁾

Thermal Resistance Junction-to-Case

Junction and Storage Temperature Range

RθJA

RθJc

°C/W

°C

1.1

TJ,TSTG

-55 to +150

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