Datasheet > CM80N06GU

CM80N06GU

更新时间： 2024-11-22 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1218K
描述
TO-252

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CM80N06GU 数据手册

CM80N06GU

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CM80N06GU is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features



V_DS: 60V

I_D: 70A

Marking Code = CM80N06GU

Date Code = XXXX

80N06GU

XXXX

RDS_ON(@V_GS=10V) : < 9.8mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

TO-252

P/N

Packaging

Remark

CM80N06GU 2500/Tape and Reel

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Tc=100°C

IDM

280

Tc=25°C

Total Power Dissipation ⁽³⁾

Derating Factor above25°C

0.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

RθJC

1.67

-55 to +150

Junction and Storage Temperature Range

TJ,TSTG

Jul. 2021, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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