是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
针数: | 7 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 600 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 1 | 端子数量: | 7 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1890 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM600HX-24A | MITSUBISHI |
获取价格 |
IGBT MODULES HIGH POWER SWITCHING USE | |
CM600YE2N-12F | POWEREX |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-8 | |
CM600YE2P-12F | POWEREX |
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Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-8 | |
CM601 | ETC |
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Analog IC | |
CM601-1 | CML |
获取价格 |
B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base | |
CM60130GK | CHEMI-CON |
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General Purpose Inductor, 13uH, 1 Element, Amorphous Magnetic-Core | |
CM60130GKD | CHEMI-CON |
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General Purpose Inductor, 13uH, 1 Element, Amorphous Magnetic-Core | |
CM60130GKE | CHEMI-CON |
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General Purpose Inductor, 13uH, 1 Element, Amorphous Magnetic-Core | |
CM602 | ETC |
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Analog IC | |
CM6022 | CML |
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T-1 Wire Terminal (standard) |