Datasheet > CM60R085FT

CM60R085FT

更新时间： 2024-11-19 17:15:03

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
7页	1285K
描述
TO-220F

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CM60R085FT 数据手册

CM60R085PT/FT

N-Channel 600V (D-S) Power MOSFET

Description

Applications

The CM60R085PT/FT is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage Super Junction technology. This high density

process and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

X=Package type



VDS: 600V

XXXX = Marking Code

60R085XT

XXXX

ID: 24A

RDS_ON(@VGS=10V) : < 90mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type

Packaging

Tube

TO-220

TO-220F

CM60R085PT

CM60R085FT

TO-220

TO-220F

Tube

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Maximum

Parameter

Symbol

Unit

CM60R085PT CM60R085FT

Drain-source Voltage

Gate-source Voltage

VDS

VGS

600

±30

Tc=25°C

24⁽⁴⁾

15⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

128

1.0

0.98

Total Power Dissipation⁽³⁾

0.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Solder Case ⁽³⁾

3.73

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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