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CM2400HC-34N_09 PDF预览

CM2400HC-34N_09

更新时间: 2024-11-18 12:50:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关高功率电源
页数 文件大小 规格书
6页 63K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM2400HC-34N_09 数据手册

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MITSUBISHI HVIGBT MODULES  
CM2400HC-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM2400HC-34N  
IC................................................................ 2400A  
VCES ....................................................... 1700V  
Insulated Type  
1-element in a Pack  
AISiC Baseplate  
Trench Gate IGBT : CSTBT™  
Soft Reverse Recovery Diode  
APPLICATION  
Traction drives, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130±0.5  
4 - M8 NUTS  
57±0.25  
57±0.25  
4(C)  
2(C)  
C
G
E
4
2
1
3
3(E)  
1(E)  
CIRCUIT DIAGRAM  
C
E
G
10.35±0.2  
3 - M4 NUTS  
6 - φ 7 MOUNTING HOLES  
10.65±0.2  
48.8±0.2  
15±0.2  
40±0.2  
screwing depth  
min. 16.5  
61.5±0.3  
5.2±0.2  
18±0.2  
screwing depth  
min. 7.7  
LABEL  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  

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