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CM2400HCB-34N PDF预览

CM2400HCB-34N

更新时间: 2024-11-18 12:23:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 开关高功率电源
页数 文件大小 规格书
7页 101K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM2400HCB-34N 技术参数

生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X5针数:9
Reach Compliance Code:unknown风险等级:5.69
外壳连接:ISOLATED最大集电极电流 (IC):2400 A
集电极-发射极最大电压:1700 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X5
元件数量:3端子数量:5
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):15600 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):3600 ns
标称接通时间 (ton):2100 nsVCEsat-Max:2.7 V
Base Number Matches:1

CM2400HCB-34N 数据手册

 浏览型号CM2400HCB-34N的Datasheet PDF文件第2页浏览型号CM2400HCB-34N的Datasheet PDF文件第3页浏览型号CM2400HCB-34N的Datasheet PDF文件第4页浏览型号CM2400HCB-34N的Datasheet PDF文件第5页浏览型号CM2400HCB-34N的Datasheet PDF文件第6页浏览型号CM2400HCB-34N的Datasheet PDF文件第7页 
MITSUBISHI HVIGBT MODULES  
CM2400HCB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM2400HCB-34N  
IC............................................................... 2400 A  
VCES ...................................................... 1700 V  
Insulated Type  
1-element in a Pack  
AISiC Baseplate  
Trench Gate IGBT : CSTBT  
TM  
Soft Reverse Recovery Diode  
APPLICATION  
Traction drives, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
190 0.5  
171 0.1  
6 - M8 NUTS  
57 0.1  
57 0.1  
57 0.1  
C
E
C
E
C
E
C
C
C
C
G
E
CM  
E
E
E
C
E
G
CIRCUIT DIAGRAM  
20.25 0.2  
41.25 0.3  
0.1  
8 - φ7  
MOUNTING HOLES  
3 - M4 NUTS  
79.4 0.3  
screwing depth  
min. 16.5  
0.2  
15  
0.3  
61.5 0.3  
0.2  
61.5  
0.3  
40  
screwing depth  
min. 7.7  
13  
0.2  
5.2  
LABEL  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Sep. 2009  

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