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CM16N20U PDF预览

CM16N20U

更新时间: 2024-11-17 17:15:03
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1269K
描述
TO-252

CM16N20U 数据手册

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CM16N20U/D  
N-Channel 200V (D-S) Power MOSFET  
Description  
Applications  
The CM16N20U/D is the N-Channel enhancement mode  
power field effect transistors with high cell density, high  
voltage planar technology. This high density process and  
design have been optimized switching performance and  
especially tailored to minimize on-state resistance.  
AC/DC load switch  
SMPS  
Notebooks and Handhelds adapter  
UPS Power  
Marking Information  
Features  
VDS: 200V  
X=Package type  
XXXX = Marking Code  
ID (@VGS=10V): 15A  
16N20X  
XXXX  
RDSON (@VGS=10V) : < 204mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
P/N  
Package Type Packaging  
Remark  
ROHS  
ROHS  
CM16N20U  
CM16N20D  
TO-252  
TO-251  
Tape and reel  
Tube  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Parameter  
Drain-source Voltage  
Symbol  
Maximum  
Unit  
VDS  
VGS  
200  
V
V
Gate-source Voltage  
±20  
Tc=25°C  
15  
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
9
59  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
A
89  
W
0.71  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
1.4  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Jul. 2022, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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