Datasheet > CM16N20U

CM16N20U

更新时间： 2024-11-17 17:15:03

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1269K
描述
TO-252

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CM16N20U 数据手册

CM16N20U/D

N-Channel 200V (D-S) Power MOSFET

Description

Applications

The CM16N20U/D is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features



V_DS: 200V

X=Package type

XXXX = Marking Code

I_D(@V_GS=10V): 15A

16N20X

XXXX

RDS_ON(@V_GS=10V) : < 204mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

Remark

ROHS

CM16N20U

CM16N20D

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

200

Gate-source Voltage

±20

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.71

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.4

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jul. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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