Datasheet > CM16N50BTF

CM16N50BTF

更新时间： 2024-11-17 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1259K
描述
TO-220F

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数据手册

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CM16N50BTF 数据手册

CM16N50BTP/F

N-Channel 500V (D-S) Power MOSFET

Description

Applications

The CM16N50BTP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage planar technology. This high density process

and design have been optimized switching performance

and especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 500V

XXXX = Marking Code

ID (@VGS=10V): 16A

16N50BTX

XXXX

RDS_ON(@VGS=10V) : < 0.45Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

TO-220F

P/N

Package Type Packaging

Remark

ROHS

CM16N50BTP

CM16N50BTF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM16N50BTP CM16N50BTF

VDS

VGS

500

±30

Gate-source Voltage

Tc=25°C

9.3

16⁽⁴⁾

9.3⁽⁴⁾

64⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Tc=100°C

Pulsed Drain Current⁽²⁾

Peak Diode Recovery dv/dt ⁽³⁾

IDM

dv/dt

V/ns

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

231

1.9

0.54

Total Power Dissipation ⁽⁴⁾

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.47

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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