Datasheet > CM12N06GS8

CM12N06GS8

更新时间： 2024-11-16 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1249K
描述
SO-8

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CM12N06GS8 数据手册

CM12N06GS8

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CM12N06GS8 is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Motor Control

DC/DC Converters

Isolated Converter Primary Side Switch

Synchronous Rectifier

Marking Information

Features



VDS: 60V

ID: 12.8A

Marking Code = 12N06GS8

Date Code = XXXX

12N06GS8

XXXX

RDS_ON(@VGS=10V) : < 9mΩ

RDS_ON(@VGS=4.5V) : < 13mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SO-8

Part Number

Packaging

Reel Size

CM12N06GS8 2500/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±20

VGS

TA=25°C

TA=70°C

12.8

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

10.2

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

2.5

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jul. 2021, Rev. 1.1

1 of 5

www.appliedpowermicro.com

12 3 4 5

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