Datasheet > CM12N65AHF

CM12N65AHF

更新时间： 2024-11-16 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1232K
描述
TO-220F

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CM12N65AHF 数据手册

CM12N65AHP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM12N65AHP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage planar technology. This high density process

and design have been optimized switching performance

and especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

ID (@VGS=10V): 12A

12N65AHX

XXXX

RDS_ON(@VGS=10V) : < 0.8Ω

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

TO-220F

P/N

Package Type Packaging

Remark

ROHS

CM12N65AHP

CM12N65AHF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM12N65AHP CM12N65AHF

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

12⁽⁴⁾

7⁽⁴⁾

48⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

245

2.0

0.51

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.47

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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