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CM1000DUC-34NF PDF预览

CM1000DUC-34NF

更新时间: 2024-11-13 12:50:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率控制局域网高功率电源
页数 文件大小 规格书
9页 514K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM1000DUC-34NF 技术参数

生命周期:Not Recommended包装说明:ROHS COMPLIANT PACKAGE-9
针数:9Reach Compliance Code:unknown
风险等级:5.72外壳连接:ISOLATED
最大集电极电流 (IC):1000 A集电极-发射极最大电压:1700 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X9元件数量:2
端子数量:9最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):8900 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:2.85 VBase Number Matches:1

CM1000DUC-34NF 数据手册

 浏览型号CM1000DUC-34NF的Datasheet PDF文件第2页浏览型号CM1000DUC-34NF的Datasheet PDF文件第3页浏览型号CM1000DUC-34NF的Datasheet PDF文件第4页浏览型号CM1000DUC-34NF的Datasheet PDF文件第5页浏览型号CM1000DUC-34NF的Datasheet PDF文件第6页浏览型号CM1000DUC-34NF的Datasheet PDF文件第7页 
MITSUBISHI IGBT MODULES  
CM1000DUC-34NF  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
- MPD series using 5th Generation IGBT and FWDi -  
CM1000DUC-34NF  
IC ….………………….….. 1000 A  
VCES ……………..…...….. 1700 V  
Flat base Type  
Copper (non-plating) base plate  
RoHS Directive compliant  
Dual switch (Half-Bridge)  
UL Recognized under UL1557, File E323585  
APPLICATION  
AC Motor Control, Motion/Servo Control, Power supply, etc.  
OUTLINE DRAWING & INTERNAL CONNECTION  
Dimension in mm  
INTERNAL CONNECTION  
C2E1  
Tolerance otherwise specified  
C2  
C1  
(Cs2)  
(Cs1)  
Division of Dimension Tolerance  
0.5 to  
3
6
±0.2  
±0.3  
±0.5  
±0.8  
±1.2  
over  
over  
3
6
to  
E1  
(Es1)  
Di1  
Di2  
Tr2  
G2  
to 30  
Tr1  
over 30 to 120  
over 120 to 400  
E2  
(Es2)  
G1  
E2  
C1  
April-2012  
1

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