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CLX30-10ES PDF预览

CLX30-10ES

更新时间: 2024-11-17 13:06:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 596K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN

CLX30-10ES 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:11 V最大漏极电流 (Abs) (ID):0.84 A
最大漏极电流 (ID):0.84 AFET 技术:METAL SEMICONDUCTOR
最高频带:KU BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:5.4 W
最小功率增益 (Gp):17 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

CLX30-10ES 数据手册

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CLX30  
HiRel X-Band GaAs Power-MESFET  
HiRel Dis crete and Microwave Semiconductor  
For professional power amplifiers  
For frequencies from 500 MHz to 12.5 GHz  
Hermetically sealed microwave power package  
Low thermal resistance for  
high voltage application  
Power added efficiency > 54 %  
Space Qualification Expected 1998  
ESA/SCC Detail Spec. No.: 5614/007,  
Type Variant No.s 01 to 03  
ESD: Electros tatic discharge sensitive device, observe handling precautions!  
Type  
Marking Ordering Code  
Pin Configuration Package  
1
2
3
CLX30-00 (ql)  
CLX30-05 (ql)  
CLX30-10 (ql)  
-
see below  
G
S
D
MWP-25  
CLX30-nn: specifies output power level (see electrical characteristics)  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Q62702L115  
on request  
on request  
ES: ESA Space Quality,  
Q62702L114  
(see order instructions for ordering example)  
S e miconductor Group  
1 of 10  
Dra ft D, S e pte mbe r 99  

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