生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 11 V |
最大漏极电流 (Abs) (ID): | 1.4 A | 最大漏极电流 (ID): | 1.4 A |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | KU BAND |
JESD-30 代码: | R-CDFM-F2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 5.4 W | 最小功率增益 (Gp): | 15 dB |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CLX32-00P | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CLX32-00S | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CLX32-05 | INFINEON |
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HiRel X-Band GaAs Power-MESFET | |
CLX32-05ES | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CLX32-10 | INFINEON |
获取价格 |
HiRel X-Band GaAs Power-MESFET | |
CLX32-10P | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
CLX32-10S | INFINEON |
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暂无描述 | |
CLX34 | INFINEON |
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HiRel X-Band GaAs Power-MESFET | |
CLX34-00 | INFINEON |
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HiRel X-Band GaAs Power-MESFET | |
CLX34-00H | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |