CLS01
TOSHIBA Schottky Barrier Diode
CLS01
Switching-Mode Power Supply (Secondary-Rectification)
Applications (Low Voltage)
Unit: mm
DC/DC Converter Applications
②
•
•
•
•
Forward voltage: V
= 0.47 V (max)
FM
Average forward current: I
= 10 A
F (AV)
Repetitive peak reverse voltage: V
= 30 V
RRM
Suitable for compact assembly due to small surface-mount package:
“L−FLATTM” (Toshiba package name)
①
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
V
30
V
A
RRM
I
10 (Note 1)
100 (50 Hz)
−40~125
−40~150
F (AV)
ANODE
①
① アノード
② カソード
②
Non-repetitive peak surge current
Junction temperature
I
A
FSM
CATHODE
T
j
°C
°C
Storage temperature range
T
stg
JEDEC
JEITA
⎯
⎯
Note 1: Tℓ = 88°C
Rectangular waveform (α = 180°), V = 15 V
R
TOSHIBA
3-4F1A
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.15 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 3.0 A (pulse test)
Min
Typ.
Max
Unit
V
V
V
I
I
I
⎯
⎯
⎯
⎯
⎯
⎯
0.34
0.38
0.45
8.0
⎯
⎯
FM (1)
FM (2)
FM (3)
FM
FM
FM
Peak forward voltage
V
= 5.0 A (pulse test)
= 10 A (pulse test)
0.47
⎯
I
V
V
V
= 5 V (pulse test)
= 30 V (pulse test)
μA
mA
pF
RRM (1)
RRM (2)
RRM
RRM
Peak repetitive reverse current
Junction capacitance
I
0.1
1.0
⎯
C
= 10 V, f = 1.0 MHz
R
530
j
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm)
(board thickness: 1.6 t)
(soldering land)
Thermal resistance
(junction to ambient)
R
⎯
⎯
⎯
⎯
100
5
°C/W
°C/W
th (j-a)
Cathode 5.7 mm × 6.2 mm
Anode
4.5 mm × 3.4 mm
Thermal resistance
(junction to lead)
R
⎯
th (j-ℓ)
1
2006-11-13