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CLS02

更新时间： 2024-09-28 03:25:51
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关
页数 文件大小 规格书
5页 184K
描述
Switching-Mode Power Supply (Secondary-Rectification) Applications (Low Voltage)

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中文翻译

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CLS02 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：R-PSSO-G1
针数：1Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.74Is Samacsys：N
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.55 V
JESD-30 代码：R-PSSO-G1最大非重复峰值正向电流：100 A
元件数量：1相数：1
端子数量：1最高工作温度：125 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：40 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CLS02 数据手册

 浏览型号CLS02的Datasheet PDF文件第2页浏览型号CLS02的Datasheet PDF文件第3页浏览型号CLS02的Datasheet PDF文件第4页浏览型号CLS02的Datasheet PDF文件第5页 
CLS02  
TOSHIBA Schottky Barrier Diode  
CLS02  
Switching-Mode Power Supply (Secondary-Rectification)  
Applications (Low Voltage)  
Unit: mm  
DC/DC Converter Applications  
4 ± 0.2  
②
1.5 ± 0.1  
0.6 ± 0.1  
•
•
•
•
Forward voltage: V  
= 0.55 V (max)  
FM  
Average forward current: I  
= 10 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 40 V  
RRM  
Suitable for compact assembly due to small surface-mount package:  
“L−FLATTM” (Toshiba package name)  
1.2 ± 0.1  
2.7 ± 0.2  
①
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
40  
V
A
RRM  
① ANODE  
② CATHODE  
I
10 (Note.1)  
100 (50 Hz)  
−40~125  
−40~150  
F (AV)  
Non-repetitive peak surge current  
Junction temperature  
I
A
FSM  
JEDEC  
⎯
T
j
°C  
°C  
JEITA  
⎯
Storage temperature range  
T
stg  
TOSHIBA  
3-4F1A  
Note1: Tℓ = 75°C  
Weight: 0.15 g (typ.)  
Rectangular waveform (α = 180°), V = 20 V  
R
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 3.0 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
I
⎯
⎯
⎯
⎯
⎯
⎯
0.36  
0.41  
0.5  
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
V
= 5.0 A (pulse test)  
= 10 A (pulse test)  
0.55  
⎯
I
V
V
V
= 5 V (pulse test)  
= 40 V (pulse test)  
4.0  
μA  
mA  
pF  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
I
0.03  
420  
1.0  
⎯
C
= 10 V, f = 1.0 MHz  
R
j
Device mounted on a glass-epoxy  
board  
(board size: 50 mm × 50 mm)  
(board thickness: 1.6 t)  
(soldering land)  
Thermal resistance  
(junction to ambient)  
R
⎯
⎯
⎯
⎯
100  
°C/W  
th (j-a)  
Cathode 5.7 mm × 6.2 mm  
Anode  
4.5 mm × 3.4 mm  
Thermal resistance  
(junction to lead)  
R
⎯
5
°C/W  
th (j-ℓ)  
1
2007-11-06  
12345

中文翻译

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