Datasheet > CJD340TR13TIN/LEAD

CJD340TR13TIN/LEAD

更新时间： 2024-11-25 19:59:07

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	1050K
描述
Transistor

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中文翻译

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技术参数
数据手册

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CJD340TR13TIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	15 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	10 MHz	Base Number Matches：	1

CJD340TR13TIN/LEAD 数据手册

浏览型号CJD340TR13TIN/LEAD的Datasheet PDF文件第2页

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CJD340 NPN

CJD350 PNP

www.centralsemi.com

SURFACE MOUNT SILICON

COMPLEMENTARY

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD340 and CJD350

are complementary silicon power transistors manufactured

in a surface mount package, and designed for high

voltage general purpose applications.

MARKING: FULL PART NUMBER

DPAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Power Dissipation

300

CBO

CEO

EBO

3.0

500

750

Power Dissipation (T =25°C)

1.56

Operating and Storage Junction Temperature

T , T

-65 to +150

8.33

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

80.1

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=300V

=3.0V

100

μA

CBO

CEO

EBO

100

μA

I =1.0mA

300

CEO

CE(SAT)

BE(ON)

I =100mA, I =10mA (CJD340)

1.0

2.6

1.5

2.0

240

I =100mA, I =10mA (CJD350)

=10V, I =1.0A (CJD340)

=10V, I =1.0A (CJD350)

=10V, I =50mA

=10V, I =50mA, f=10MHz

MHz

R5 (11-June 2013)

12 3 4

中文翻译

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CJD350TR	CENTRAL	获取价格	暂无描述
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CJD350TR13PBFREE	CENTRAL	获取价格	Transistor,
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