Datasheet > CJD3439

CJD3439

更新时间： 2024-11-25 03:25:39

品牌	Logo	应用领域
CDIL		晶体晶体管高压高电压电源
页数	文件大小	规格书
4页	573K
描述
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CJD3439 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS

CJD3439

DPAK (TO-252)

Plastic Package

Designed for use in Line Operated Equipment Requiring High f_T

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

UNIT

V_CEO

350

Collector Emitter Voltage

V_CBO

V_EBO

I_C

450

5.0

0.3

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

Base Current

I_B

150

Total Power Dissipation at T_c=25ºC

P_D

0.12

Derate Above 25ºC

Operating and Storage Junction

Temperature Range

W/ºC

T_j,T_stg

- 65 to +150

8.33

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

ºC/W

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CEO(sus)

I_CEO

TEST CONDITION

MIN TYP MAX

UNIT

I_C=5mA, I_B=0

Collector Emitter Sustaining Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

350

V_CE=300V, I_B=0

V_CE=450V, V_EB(off)=1.5V

V_CB=350V, I_E=0

500

I_CEX

I_CBO

V_BE=5V, I_C=0

I_EBO

h_FE

I_C=2mA, V_CE=10V

I_C=20mA, V_CE=10V

I_C=50mA, I_B=4mA

I_C=50mA, V_CE=10V

200

0.5

1.3

0.8

V_{CE (sat)}

V_{BE (sat)}

V_{BE (on)}

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Base Emitter On Voltage

DYNAMIC CHARACTERISTICS

DESCRIPTION

Current Gain Bandwidth Product

SYMBOL

TEST CONDITION

I_C=10mA, V_CE=10V, f=5MHz

MIN TYP MAX

UNIT

MHz

f_T

C_0b

h_fe

V_CB=10V, I_E=0, f=1MHz

Output Capacitance

I_C=5mA, V_CE=10V, f=1KHz

Small Signal Current Gain

CDIL

MARKING

CJD3439

XY MX

XY= Date Code

CJD3439Rev300606E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

下载PDF

与CJD3439相关器件

型号	品牌	获取价格	描述	数据表
CJD350	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTOR
CJD350BKPBFREE	CENTRAL	获取价格	Transistor,
CJD350BKTIN/LEAD	CENTRAL	获取价格	Transistor
CJD350LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
CJD350TR	CENTRAL	获取价格	暂无描述
CJD350TR13	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
CJD350TR13PBFREE	CENTRAL	获取价格	Transistor,
CJD350TR13TIN/LEAD	CENTRAL	获取价格	Transistor
CJD350TRLEADFREE	CENTRAL	获取价格	Transistor
CJD41C	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTOR