Datasheet > CGH21240F

CGH21240F

更新时间： 2024-10-15 01:11:11

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
15页	1701K
描述
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

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CGH21240F 数据手册

CGH21240F

240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

Cree’s CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGH21240F ideal for

1.8-2.3GHz WCDMA and LTE ampliﬁer applications. The transistor is supplied in a

ceramic/metal ﬂange package.

Typical Performance Over 2.0-2.3GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.0 GHz

2.1 GHz

2.2 GHz

2.3 GHz

Units

Gain @ 46 dBm

13.1

14.6

15.1

15.7

ACLR @ 46 dBm

Drain Efﬁciency @ 46 dBm

Note:

-36.5

30.5

-34.5

-34.2

32.9

-32.0

33.8

dBc

32.7

Measured in the CGH21240F-AMP ampliﬁer circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,

PAR = 8.81 dB @ 0.01 % Probability on CCDF.

Features

•

1.8 - 2.3 GHz Operation

15 dB Gain

-35 dBc ACLR at 40 W P_AVE

33 % Efﬁciency at 40 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/wireless

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