CGA-6618
RoHS Compliant
& Green Package
Product Description
Pb
CGA-6618Z
Dual CATV 1 MHz to 1000 MHz
High Linearity GaAs HBT Amplifier
Preliminary
Sirenza Microdevice’s CGA-6618 is a high performance GaAs
HBT MMIC Amplifier. Designed with the InGaP process technol-
ogy for excellent reliability. A Darlington configuration is utilized
for broadband performance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. The CGA-6618 contains two amplifiers for use in
wideband Push-Pull CATV amplifiers requiring excellent second
order performance. The second and third order non-linearities
are greatly improved in the push pull configuration.
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
• Excellent CSO/CTB/XMOD at
+34 dBmV Output Power per Tone
• Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
1
2
3
4
8
7
6
5
Amplifier
Configuration
Applications
• CATV Head End Driver and Predriver Amplifier
• CATV Line Driver Amplifier
ELECTRICAL SPECIFICATIONS
S y m b o l
P a ra m e te r
F re q .(M H z )
M in .
Ty p .
M a x .
U n its
5 0
1 3 .8
1 4 .1
1 3 .4
1 3 .0
5 0 0
8 7 0
1 0 0 0
G
S m a ll S ig na l G a in
d B
1 2 .4
1 2 .0
1 4 .4
1 4 .0
5 0
2 5 0
5 0 0
7 6 .5
7 7 .5
7 2 .0
O utp ut S e co nd O rd e r Inte rce p t P o int
To ne Sp a cing = 1 M H z, P o ut p e r to ne = +6 d B m
O IP 2
O IP 3
P 1 d B
d B m
d B m
d B m
7 0 .0
3 8 .0
5 0
5 0 0
8 7 0
3 8 .0
3 9 .0
4 0 .0
O utp ut Third O rd e r Inte rce p t P o int
To ne Sp a cing = 1 M H z, P o ut p e r to ne = +6 d B m
5 0
5 0 0
8 7 0
2 0 .0
2 1 .0
2 1 .5
O utp ut P o w e r a t 1 d B G a in C o m p re ssio n
1 9 .5
1 0
5 0 0
1 0 0 -8 7 0
1 5 .5
IR L
Inp ut R e turn L o ss
d B
d B
5 0 0
1 0 0 -8 7 0
1 2 .5
O R L
O utp ut R e turn L o ss
9 .0
5 0
5 0 0
8 7 0
5 .3
5 .4
5 .6
N o ise F ig ure
B a lun Inse rtio n L o ss Includ e d
N F
d B
6 .6
C S O
C TB
X M O D
V D
W o rst C a se O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
W o rst C a se O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
W o rst C a se O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
D e vice O p e ra ting Vo lta g e
8 1
7 0
d B c
d B c
d B c
V
6 3
4 .8
5 .1
1 6 0
5 .4
ID
D e vice O p e ra ting C urre nt
1 4 4
1 7 6
m A
R TH (J-L )
The rm a l R e sista nce (Junctio n to L e a d )
3 5
°C /W
Test Conditions: VS = 8 V
ID = 160 mA Typ. RBIAS = 33 Ohms TL = 25ºC
ZS = ZL = 75 Ohms Push Pull Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101994 Rev J