5秒后页面跳转
CGA-6618Z PDF预览

CGA-6618Z

更新时间: 2024-11-04 06:47:35
品牌 Logo 应用领域
威讯 - RFMD 放大器有线电视射频微波
页数 文件大小 规格书
10页 422K
描述
DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER

CGA-6618Z 数据手册

 浏览型号CGA-6618Z的Datasheet PDF文件第2页浏览型号CGA-6618Z的Datasheet PDF文件第3页浏览型号CGA-6618Z的Datasheet PDF文件第4页浏览型号CGA-6618Z的Datasheet PDF文件第5页浏览型号CGA-6618Z的Datasheet PDF文件第6页浏览型号CGA-6618Z的Datasheet PDF文件第7页 
CGA-6618(Z)  
Dual CATV  
1MHz to  
1000MHz  
High Linearity  
GaAs HBT  
Amplifier  
CGA-6618(Z)  
DUAL CATV 1MHz to 1000MHz HIGH  
LINEARITY GaAs HBT AMPLIFIER  
RoHS Compliant and Pb-Free Product (Z Part Number)  
Package: ESOP-8  
Product Description  
Features  
RFMD’s CGA-6681(Z) is a high performance GaAs HBT MMIC Amplifier. Designed  
with the InGaP process technology for excellent reliability. A Darlington configura-  
tion is utilized for broadband performance. The heterojunction increases break-  
down voltage and minimizes leakage current between junctions. The CGA-6618(Z)  
contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring  
excellent second orfer performance. The second or third order non-linearities are  
greatly improved in the push pull configuration.  
„
„
„
Available in Lead-Free, RoHS  
Compliant, and Green Pack-  
aging  
Excellent CSO/CTB/XMOD  
Performance at +34dBmV  
Output Power Per Tone  
Dual Devices in Each SOIC-8  
Package Simplify Push-Pull  
Configuration PC Board Lay-  
out  
Optimum Technology  
Amplifier Configuration  
Matching® Applied  
„
ESOP-8 Package  
GaAs HBT  
9
GaAs MESFET  
1
2
3
4
8
7
6
5
Applications  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
„
CATV Head End Driver and  
Predriver Amplifier  
„
CATV Line Driver Amplifier  
Si BJT  
GaN HEMT  
InP HBT  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
13.8  
14.1  
13.4  
13.0  
76.5  
Max.  
Small Signal Gain  
dB  
dB  
dB  
dB  
dBm  
50MHz  
500MHz  
870MHz  
1000MHz  
50 MHz  
12.4  
12.0  
14.4  
14.0  
OIP , Tone Spacing=1MHz, P per  
2
OUT  
tone-+6dBm  
77.5  
72.0  
38.0  
dBm  
dBm  
dBm  
250MHz  
500MHz  
50MHz  
70.0  
38.0  
OIP , Tone Spacing=1MHz, P per  
3
OUT  
tone-+6dBm  
39.0  
40.0  
20.0  
21.0  
21.5  
15.5  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dBm  
dB  
dB  
500MHz  
870MHz  
50MHz  
500MHz  
870MHz  
500MHz  
100 - 870MHz  
500MHz  
100 - 870MHz  
50MHz  
Output Power at 1dB Compression  
19.5  
10  
Input Return Loss  
Output Return Loss  
12.5  
5.3  
9.0  
Noise Figure - Balium Insertion Loss  
Included  
dB  
5.4  
5.6  
dB  
dB  
500MHz  
870MHz  
6.6  
Test Conditions: V =8V, I =160mA Typ., R  
=33Ω, T =25°C, Z =Z =75Ω, Push Pull Application Circuit  
L S L  
S
D
BIAS  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-101993 Rev L  
1 of 10  

与CGA-6618Z相关器件

型号 品牌 获取价格 描述 数据表
CGA6J2C0G1H223J TDK

获取价格

Automotive Grade Capacitors
CGA6J2C0G1H223J125AA TDK

获取价格

CAP CER 0.022UF 50V C0G 1210
CGA6J2C0G2A153J TDK

获取价格

Automotive Grade Capacitors
CGA6J2C0G2A153J125AA TDK

获取价格

CAP CER 0.015UF 100V C0G 1210
CGA6J2NP01H223J125AA TDK

获取价格

Automotive Grade ( High Temperature Application )
CGA6J2NP02A153J125AA TDK

获取价格

Automotive Grade ( High Temperature Application )
CGA6J4C0G2J103G125AA TDK

获取价格

Capacitance=10nFEdc=630VT.C.=C0G
CGA6J4C0G2J103J125AA TDK

获取价格

CAP CER 10000PF 630V C0G 1210
CGA6J4C0G2J392G125AA TDK

获取价格

Capacitance=3.9nFEdc=630VT.C.=C0G
CGA6J4C0G2J392J TDK

获取价格

Automotive Grade Capacitors