Datasheet > CFB810

CFB810

更新时间： 2024-11-12 09:23:43

品牌	Logo	应用领域
CDIL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
2页	44K
描述
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

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中文翻译

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数据手册

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CFB810 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

CFB810

(9AW)

TO-220FP

MARKING:- CFB

810

Designed for Relay Drive and Motor Drive

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

110

5.0

8.0

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

t=50ms

ICP

Base Current

1.0

Collector Power Dissipation @ Ta=25 deg C PC

2.0

Collector Power Dissipation @ Tc=25 deg C

Junction Temperature

Storage Temperature Range

Tstg

150

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

110

TYP

MAX

UNIT

Collector Emitter Voltage

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Saturation Voltage

DC Current Gain

VCEO

ICBO

IEBO

IC=5mA, IB=0

VCB=110V, IE=0

VEB=5V,IC=0

100

3.0

2.5

VCE(Sat) IC=5A,IB=5mA

hFE

IC=2A, VCE=3V

IC=8A, VCE=3V

1.0

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

Cob

VCE=12V,IC=0.5A,

VCB=10V, IE=0

f=1MHz

100

110

MHz

Continental Device India Limited

Page 1 of 2

Data Sheet

中文翻译

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