Datasheet > CF001-01_08

CF001-01_08

更新时间： 2024-10-02 09:23:35

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CF001-01_08 数据手册

GaAs MESFETTransistor

March 2008 - Rev 15-Mar-08

CF001-01

Features

High Gain: Usable to 44 GHz

P1dB Power: 21 dBm

Wfer Qualification Procedure

Customer Wafer Selection Available

General Description

Mimix CF001-01 GaAs-based transistor is a 300 um gate

width, sub-half-micron gate length GaAs device with Silicon

Nitride passivation.The CF001-01 provides high gain up to

26 GHz. It is suitable for general purpose and driver

amplifier applications with up to +21 dBm power from a

single FET. This device can also be used in oscillator

applications.The CF001-01 is available in chip form and is

suitable for airborne, shipboard and ground-based

equipment.The devices are 100% DC tested and every

wafer is qualified based on sample RF and reliability testing.

Screening includes MIL-STD-750 Class B, Class S and

commercial screening.These devices are also available in

packaged form. Please consult the CFB0101-B, CFA0101-A

datasheets or contact the factory for further information.

12.0

21.0

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

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