Datasheet > CF003-03-000V

CF003-03-000V

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CF003-03-000V 技术参数

GaAs Pseudomorphic HEMTTransistor

July 2008 - Rev 19-Jul-08

CF003-03

Features

Low Noise Figure 1 dB @ 12 GHz

High Gain: 10 dB at 12 GHz

P1dB Power: 20 dBm

Wafer Qualification Procedure

Customer Wafer Selection Available

General Description

Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

sub-half-micron gate length GaAs device with Silicon Nitride

passivation.The CF003-03 provides low noise figure and wide

dynamic range up to 26 GHz. It is suitable for narrow and wide

band amplifiers. Superior gain makes this model useful for

high gain feedback amplifiers. Its rugged construction allows

it to withstand the same input power as conventional MESFET.

The CF003-03 is available in chip form and is suitable for

airborne, shipboard and ground-based equipment.The

devices are 100% DC tested and every wafer is qualified based

on sample RF and reliability testing. Screening includes

MIL-STD-750 Class B, Class S and commercial screening.These

devices are also available in packaged form. Please consult

the CFB0303-B, CFA0303-A datasheets or contact the factory

for further information.

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

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