Datasheet > CF001-03_08

CF001-03_08

更新时间： 2024-10-02 09:23:35

品牌	Logo	应用领域
MIMIX		晶体晶体管
页数	文件大小	规格书
4页	492K
描述
GaAs Pseudomorphic HEMT Transistor

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CF001-03_08 数据手册

GaAs Pseudomorphic HEMTTransistor

April 2008 - Rev 03-Apr-08

CF001-03

Features

High Gain: Usable to 44 GHz

Low Noise Figure 0.8 dB @ 12 GHz

Wafer Qualification Procedure

Customer Wafer Selection Available

General Description

Mimix CF001-03 GaAs-based transistor is a 300 um gate

width, sub-half-micron gate length GaAs device with Silicon

Nitride passivation.The CF001-03 is suitable for narrow and

wide band low noise and high gain amplifiers up to 40 GHz.

The CF001-03 is available in chip form and is suitable for

airborne, shipboard and ground-based equipment.The

devices are 100% DC tested and every wafer is qualified

based on sample RF and reliability testing. Screening

includes MIL-STD-750 Class B, Class S and commercial

screening.These devices are also available in packaged

form. Please consult the CFS0103-SB, CFB0103-B,

CFA0103-A datasheets or contact the factory for further

information.

CF001-03

Expitaxial

1.2

1.8

8.5 9.5

14.0

10.5

7.0

12.0

17.0

30 60 120

-0.5 -1.3 -2.5

-5.5 -8.0

Page 1 of 4

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4

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