Datasheet > CES2312

CES2312

更新时间： 2024-02-15 23:03:18

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	277K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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CES2312 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

CES2312 数据手册

CES2312

Electrical Characteristics T_A= 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^c

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 20V, V_GS= 0V

V_GS= 8V, V_DS= 0V

V_GS= -8V, V_DS= 0V

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= 250µA

V_GS= 4.5V, I_D= 5.0A

V_GS= 2.5V, I_D= 4.5A

V_DS= 10V, I_D= 5.0A

0.5

1.2

mΩ

On-Resistance

Forward Transconductance

Dynamic Characteristics ^d

Input Capacitance

C_iss

C_oss

C_rss

500

300

140

V_DS= 8V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^d

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

2.3

2.9

V_DD= 10V, I_D= 1A,

V_GS= 4.5V, R_GEN= 6Ω

Turn-On Rise Time

Turn-Off Delay Time

108

Turn-Off Fall Time

Total Gate Charge

Q_g

V_DS= 10V, I_D= 5.0A,

V_GS= 4.5V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current ^b

Drain-Source Diode Forward Voltage ^c

I_S

1.0

1.2

V_SD

V_GS= 0V, I_S= 1A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

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