Datasheet > CEM6601_10

CEM6601_10

更新时间： 2022-05-13 16:46:23

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	430K
描述
P-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEM6601_10 数据手册

CEM6601

10²

10¹

10⁰

10^-1

10^-2

V_DS=-30V

I_D=-3.5A

R_DS(ON)Limit

10ms

100ms

T_A=25 C

T_J=150 C

Single Pulse

10^-2

10^-1

10⁰

10¹

10²

Qg, Total Gate Charge (nC)

-VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

V^DD

toff

d(off)

d(on)

OUT

V^IN

90%

10%

90%

OUT

VGS

10%

INVERTED

R^GEN

90%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

Figure 9. Switching Test Circuit

10⁰

D=0.5

0.2

10^-1

0.1

0.05

0.02

PDM

0.01

10^-2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

Single Pulse

10^-3

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

1 2 34

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