Datasheet > CEM6601_10

CEM6601_10

更新时间： 2022-05-13 16:46:23

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	430K
描述
P-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CEM6601_10 数据手册

CEM6601

Electrical Characteristics T_A= 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^c

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= -60V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

-60

-1

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= -250µA

V_GS= -10V, I_D= -4A

V_GS= -4.5V, I_D= -2A

-1

-3

mΩ

On-Resistance

125

Dynamic Characteristics ^d

Forward Transconductance

Input Capacitance

g_FS

V_DS= -10V, I_D= -15A

1135

C_iss

C_oss

C_rss

V_DS= -30V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^d

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= -30V, I_D= -1A,

V_GS= -10V, R_GEN= 6Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

22.6

2.4

5.7

29.4

V_DS= -30V, I_D= -3.5A,

V_GS= -10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current ^b

Drain-Source Diode Forward Voltage ^c

I_S

-2

V_SD

V_GS= 0V, I_S= -2A

-1.2

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

123 4

下载PDF

与CEM6601_10相关器件

型号	品牌	描述	获取价格	数据表
CEM6607	CET	Dual P-Channel Enhancement Mode Field Effect Transistor	获取价格
CEM6608	CET	Dual N-Channel Enhancement Mode Field Effect Transistor	获取价格
CEM6659	CET	Dual Enhancement Mode Field Effect Transistor (N and P Channel)	获取价格
CEM6861	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CEM7101	CET	Dual N-Channel Enhancement Mode Field Effect Transistor	获取价格
CEM7350	CET	Dual Enhancement Mode Field Effect Transistor (N and P Channel)	获取价格