Datasheet > CEM7101

CEM7101

更新时间： 2024-02-18 02:42:17

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	107K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEM7101 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEM7101 数据手册

CEM7101

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 4A, R_DS(ON)= 75mΩ @V_GS= 10V.

R_DS(ON)= 100mΩ @V_GS= 4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

±20

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation

P_D

2.0

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

62.5

C/W

2004.November

http://www.cetsemi.com

5 - 135

12 3 4

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