Datasheet > CEM7350_08

CEM7350_08

更新时间： 2022-05-13 19:26:24

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	547K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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CEM7350_08 数据手册

CEM7350

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

100V, 2.6A, R_DS(ON)= 190mΩ @V_GS= 10V.

-100V, -2.0A, R_DS(ON)= 320mΩ @V_GS= -10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

N-Channel

P-Channel

-100

Units

Drain-Source Voltage

100

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

±20

-2.0

±20

2.6

I_DM

-8.0

Maximum Power Dissipation

P_D

2.0

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

62.5

C/W

2008.October

http://www.cetsemi.com

12 3 4 5 6 7

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