Datasheet > CEF04N6

CEF04N6

更新时间： 2022-11-26 12:19:51

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	45K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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CEF04N6 数据手册

CEF04N6

Feb. 2003

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

600V , 2.5A , RDS(ON)=2.5Ω @VGS=10V.

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220F full-pak for through hole

TO-220F

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

600

VGS

Gate-Source Voltage

2.5

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

2.5

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.28

W/ C

Operating and Storage Temperautre Range

, TSTG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

įJC

3.6

RįJA

6-122

12 3 4 5

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